SFG and DFG investigation of Au(111), Au(210), polycrystalline Au,Au–Cu and Au–Ag–Cu electrodes in contact with aqueous solutions containing KCN and 4-cyanopyridine

We report on potential-dependent in situ SFG and DFG spectroscopy carried out at Au(111), Au(210), polycrystalline Au, Au–Cu and Au–Ag–Cu electrodes in contact with aqueous solutions containing CN⁻ and 4-cyanopyridine (4CP). Spectroelectrochemical work was complemented by cyclic voltammetry. The chief stress has been placed on systematising and quantifying the interaction between 4CP and CN⁻ and the attending effects on the vibrational and electronic structures of the interface. The voltammetric behaviour of the investigated electrodes, modified by the addition of 4CP to the CN⁻ electrolyte, denote changes in the CN⁻ adsorption characteristics and effects of the adsorbed CN⁻ layer on the electrodic reactivity of 4CP. The differences among the investigated electrodes can be explained in terms of their respective degrees of atomic packing or with alloying effects on the stability of adsorbed CN⁻. The potential-dependent spectra have been analysed quantitatively with a model for the second order non linear susceptibility accounting for vibrational and electronic effects. The spectral changes induced by addition of 4CP denote interaction of the aromatic with the electrode through the CN⁻ monolayer. The non-resonant contribution yields information on the effects of 4CP on the fine structure of the bound electron density of states.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Fluorescent photon down conversion for the improvement of the blue response of ZnO/CdS/Cu(In,Ga)Se₂ heterojunction solar cells and modules is investigated. Fluorescent dyes of the series Lumogen® F are analyzed by optical transmission and reflection as well as by photoluminescence measurements. A spectral transfer matrix formalism is introduced that allows to predict the suitability of a luminescent dye as a down-converter for a given solar cell from its absorption/emission properties. We find that Lumogen® F Violet 570 and Lumogen® F Yellow 083 as well as a combination of both yields improvements for Cu(In,Ga)Se₂ solar modules. Particularly, we find that the short circuit current density of a Cu(In,Ga)Se₂ mini-module is improved by 1.5 mA cm^− 2 when applying a varnish with a combination of Lumogen® F Violet and Yellow. About 0.5 mA cm^− 2 of this improvement is due to a reduced overall reflectance and an improvement of 1 mA cm^− 2 results from the frequency conversion by the dyes.     

Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells

The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.     

La3+掺杂对纳米TiO2微观结构及光催化性能的影响

以钛酸丁酯和氯化镧为原料,采用溶胶-凝胶法制备了La3+掺杂TiO2纳米粉体,讨论了不同掺杂浓度、不同热处理温度的样品催化降解刚果红染料实验中的光催化活性,并通过X射线衍射(XRD)、透射电镜(TEM)分析了La3+掺杂TiO2样品的相组成、晶胞参数和晶粒大小对光催化活性的影响.结果表明:La3+掺杂能够显著提高TiO2粒子的光催化活性,最佳掺杂浓度为100∶3 0,最佳热处理温度为600℃;La3+掺杂的TiO2的相组成是影响光催化活性的决定性因素;晶格膨胀程度及晶粒大小对光催化活性的影响,主要是在相组成相同或相近时才体现得比较明显.     

Effect of functionalization and boron and nitrogen substitution on some properties of carbon nanotubes

Molecular orbital calculations of the ionization potential of single wall carbon nanotubes having donor NH₂ and acceptor NO₂ groups bonded to the side walls and ends and boron and nitrogen substituted for carbon show substantial increases in ionization potential compared to carbon nanotubes with no functional groups and no carbon substitutions. The presence of a carbon vacancy on the side wall also causes a substantial increase in the ionization potential. The effect of tube length on the ionization energy is also calculated. The calculations also suggest that at appropriate levels of boron and nitrogen doping the armchair carbon nanotubes could be high temperature organic ferromagnetic materials.     

添加微量锡对铜基摩擦材料性能的影响

研究了添加微量锡对铜基摩擦的摩擦性能的影响。结果表明，微量锡对摩擦系数无显著影响，但对磨损有显著影响，当锡含量为０．５０％时，摩擦材料及对偶材料的磨损都较小。     

Low-cycle fatigue behavior of Sn-Ag, Sn-Ag-Cu, and Sn-Ag-Cu-Bi lead-free solders

Low-cycle fatigue (LCF) tests on as-cast Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-3Ag-0.5Cu-1Bi, and Sn-3Ag-0.5Cu-3Bi solders was carried out using a noncontact strain-controlled system at 20°C with a constant frequency of 0.1 Hz. The addition of Cu does not significantly affect the fatigue life of eutectic Sn-Ag solder. However, the fatigue life was significantly reduced with the addition of Bi. The LCF behavior of all solders followed the Coffin-Manson relationship. The fatigue life of the present solders is dominated by the fracture ductility and can be described by the ductility-modified Coffin-Manson’s relationship. Steps at the boundaries of dendrite phases were the initiation sites for microcracks for Sn-3.5Ag, Sn-3Ag-0.5Cu, and Sn-3Ag-0.5Cu-1Bi solders, while for Sn-3Ag-0.5Cu-3Bi solder, cracks initiated along both the dendrite boundaries and subgrain boundaries in the dendrite phases. The linking of these cracks and the propagation of cracks inside the specimen occurred both transgranularly through eutectic phases and intergranularly along dendrite boundaries or subgrain boundaries.     

Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm⁻³ which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm⁻³, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.